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Advance Technical Information
GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK120N30T IXFX120N30T
RDS(on) trr
TO-264 (IXFK)
VDSS ID25
= =
300V 120A 24m 200ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C
Maximum Ratings 300 300 20 30 120 330 30 2.5 20 960 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W C C C C C Nm/lb.in. N/lb. g g
G = Gate S = Source (TAB) D = Drain TAB = Drain
G D S
(TAB)
PLUS247 (IXFX)
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247)
300 260 1.13/10 20..120 /4.5..27 10 6
Features International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 4mA VGS = 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A, Note 1 TJ = 125C
Characteristic Values Min. Typ. Max. 300 2.5 5.0 200 V V nA
Easy to Mount Space Savings High Power Density Applications DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications
50 A 3 mA 24 m
(c) 2009 IXYS CORPORATION, All rights reserved
DS100132(03/09)
IXFK120N30T IXFX120N30T
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.15 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Resistive Switching Times VGS = 15V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 70 120 20 1380 135 32 31 87 23 265 87 60 0.13 S nF pF pF ns ns ns ns nC nC nC C/W C/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
TO-264 (IXFK) Outline
Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 60A, VGS = 0V, Note 1 IF = 60A, -di/dt = 100A/s VR = 75V, VGS = 0V 0.8 10.4 Characteristic Values Min. Typ. Max. 120 480 1.5 200 A A V ns C A
PLUS 247TM (IXFX) Outline
Note 1: Pulse Test, t 300s; Duty Cycle, d 2%.
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
7,157,338B2
6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537
IXFK120N30T IXFX120N30T
Fig. 1. Output Characteristics @ 25C
120 110 100 90 VGS = 10V 7V 250 300 VGS = 10V 8V
Fig. 2. Extended Output Characteristics @ 25C
ID - Amperes
80 70 60 50 40 30 20 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 5V 6V
200
7V
ID - Amperes
150 6V 100
50 5V 0 0 2 4 6 8 10 12 14 16 18 20
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ 125C
120 110 100 VGS = 10V 7V 2.8 2.6 2.4
Fig. 4. RDS(on) Normalized to ID = 60A Value vs. Junction Temperature
VGS = 10V
ID - Amperes
80 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
RDS(on) - Normalized
90 6V
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 I D = 120A I D = 60A
5V
4.0
4.5
5.0
5.5
6.0
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 60A Value vs. Drain Current
3.0 2.8 2.6 VGS = 10V 120 TJ = 125C 100 140
Fig. 6. Maximum Drain Current vs. Case Temperature
RDS(on) - Normalized
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 20 40 60
ID - Amperes
TJ = 25C 80 100 120 140 160 180 200 220 240 260 280
80 60 40 20 0 -50 -25 0 25 50 75 100 125 150
ID - Amperes
TC - Degrees Centigrade
(c) 2009 IXYS CORPORATION, All rights reserved
IXFK120N30T IXFX120N30T
Fig. 7. Input Admittance
200 180 160 200 TJ = - 40C 180 160
Fig. 8. Transconductance
g f s - Siemens
140
ID - Amperes
120 100 80 60 40 20 0 3.2 3.6 4.0 4.4
TJ = 125C 25C - 40C
140 120 100 80 60 40 20 0
25C
125C
4.8
5.2
5.6
6.0
6.4
6.8
0
20
40
60
80
100
120
140
160
180
200
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
350 300 8 250 7 10 9 VDS = 150V I D = 60A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
VGS - Volts
TJ = 125C TJ = 25C
200 150 100 50
6 5 4 3 2 1
0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0 0 30 60 90 120 150 180 210 240 270
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100,000 1,000.0
Fig. 12. Forward-Bias Safe Operating Area
f = 1 MHz
Ciss
RDS(on) Limit 100.0 25s
Capacitance - PicoFarads
I D - Amperes
10,000
100s 10.0
Coss 1,000
1.0 TJ = 150C Crss 100 0 5 10 15 20 25 30 35 40 0.1 1 10 100 TC = 25C Single Pulse
1ms
1000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_120N30T(9W)3-23-09
IXFK120N30T IXFX120N30T
Fig. 13. Maximum Transient Thermal Impedance
1.00
Z (th)JC - C / W
0.10
0.01
0.00 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2009 IXYS CORPORATION, All rights reserved
IXYS REF: F_120N30T(9W)3-23-09

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